Wei-Ren Lin received the B.S. degree in Electrical Engineering from National Tsing Hua University(NTHU), Hsinchu, Taiwan in 2016 and the M.S. degree in Graduate Institute of Photonics and Optoelectronics from National Taiwan University(NTU), Taipei, Taiwan in 2018.
His master research focused on fabrication and degradation mechanism analyzation of GaN power devices for power switching application. His master thesis integrated device layout and fabrication process design, and measurement results to optimize GaN-HEMT structure under different operation conditions, solving the current collapse phenomenon. Currently, his research area includes the driving techniques of GaN HEMTs and the applications in power electronics.
WR Lin, C Suarez, K Umetani, W Martinez, "Gate Drivers Techniques and Solutions for GaN HEMTs in High Frequency Applications," 2020 IEEE 29th International Symposium on Industrial Electronics (ISIE), 712-716.
Jun, 2020
Delft
W Martinez, C Suarez, WR Lin, "Iron Loss Evaluation of GaN PWM-Supplied Magnetic Cores for MHz Converters in More Electric Aircrafts-400Hz case," 2020 IEEE 29th International Symposium on Industrial Electronics (ISIE), 712-716.
Sep,2021
Ghent
WR Lin, U Chatterjee, W Martinez, "Characterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation," In Proceedings of the 2021 23rd European Conference on Power Electronics and Applications (EPE’21 ECCE Europe), pp. P1–P7.
May,2022
Himeji
W Martinez, WR Lin, C Suarez, "EMC Implications of Implementing WBG Devices in Battery Charger Modules for Electric Vehicles," 2022 International Power Electronics Conference (IPEC-Himeji 2022-ECCE Asia .
