Homepage of Patrick Reynaert

chip gallery

A 525–556-GHz Radiating Source With a Dielectric Lens Antenna in 28-nm CMOS

Kaizhe Guo, Alexander Standaert and Patrick Reynaert

Published at IEEE Transactions on Terahertz Science and Technology, April 2018.

A coupled-RTWO-based subharmonic receiver front-end for 5G E-Band backhaul links in 28nm bulk CMOS

Marco Vigilante and Patrick Reynaert

Presented first at ISSCC 2018.

A 120GHz in-band full-duplex PMF transceiver with tunable electrical-balance duplexer in 40nm CMOS

Niels Van Thienen, Yang Zhang and Patrick Reynaert

Presented at ESSCIRC 2017 and also published in JSSC 2018.

A 20Gbps 1.2GHz full-duplex integrated AFE in 28nm CMOS for copper access

Thibaut Gurne, Maarten Strackx, Maarten Tytgat, Jan Cools and Patrick Reynaert
Nokia Bell Labs and KU Leuven MICAS 2016

Presented at ESSCIRC 2017.

A 475–511GHz radiating source with SIW-based harmonic power extractor in 40 nm CMOS

Kaizhe Guo and Patrick Reynaert

Presented at International Microwave Symposium, 2017.

An F-band active phase shifter in 28nm CMOS

Maxime De Wit and Patrick Reynaert

Presented at International Microwave Symposium, 2017.

21.3 dBm 18.5 GHz-BW 8-way E-band power amplifier in 28 nm high performance mobile CMOS

Dixian Zhao and Patrick Reynaert

Published in Electronic Letters, 2017.

Permittivity Measurements in Millimeter Range of PTFE Foams

Alexander Standaert, Mohadig Rousstia, Saoer Sinaga and Patrick Reynaert

Published in Microwave and Wireless Components Letters, 2017.

A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9V 28nm bulk CMOS

Marco Vigilante and Patrick Reynaert

Presented at RFIC 2017 (best student paper award) and also published in JSSC 05/2018.

A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS

Yang Zhang and Patrick Reynaert

Presented at RFIC 2017

A 32 GHz 20 dBm-PSAT transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS

Paramartha Indirayanti and Patrick Reynaert

Presented at RFIC 2017

Highly Tunable Triangular Wave UWB Baseband Pulse Generator With Amplitude Stabilization in 40-nm CMOS

B. Faes, P. Reynaert and P. Leroux

Published in Transactions on Circuits And Systems II, 06/2016

An 18Gbps polymer microwave fiber (PMF) communication link in 40nm CMOS

Niels Van Thienen, Yang Zhang, Maxime De Wit and Patrick Reynaert

Presented at ESSCIRC 2016

A 40nm bulk CMOS line driver for broadband communication

Jan Cools and Patrick Reynaert

Presented at ESSCIRC 2016

A Dual-Band E-Band Quadrature VCO with Switched Coupled Transformers in 28nm HPM bulk CMOS
Marco Vigilante and Patrick Reynaert

Presented at RFIC 2015.

Transformer-Based Doherty Power Amplifiers for mm-Wave Applications in 40-nm CMOS
Ercan Kaymaksut, Dixian Zhao and Patrick Reynaert
KU Leuven ESAT-MICAS - 2015

Published in IEEE Transactions on Microwave Theory and Techniques, 04/2015.

Highly Linear Fully Integrated Wideband RF PA for LTE-Advanced in 180-nm SOI
Brecht Francois and Patrick Reynaert
KU Leuven ESAT-MICAS - 2015

Published in IEEE Transactions on Microwave Theory and Techniques, 02/2015.

An FSK plastic waveguide communication link in 40nm CMOS
Wouter Volkaerts, Niels Van Thienen and Patrick Reynaert
KU Leuven ESAT-MICAS - 2015

Presented at ISSCC 2015.

Millimeter-wave Packaging on Alumina Board for E-band CMOS Power Amplifiers
Yang Zhang, Dixian Zhao and Patrick Reynaert
KU Leuven ESAT-MICAS - 2015

Presented at 2015 IEEE/MTT-S Radio Wireless Week(RWW), Jan-2015, San Diego, USA.

A 160-GHz Three-Stage Fully-Differential Amplifier in 40-nm CMOS
Niels Van Thienen and Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at ICECS 2014.

An E-Band Low-Noise Transformer-Coupled Quadrature VCO in 40nm CMOS
Marco Vigilante and Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at ESSCIRC 2014.

A 60GHz Transmitter in 40nm CMOS Achieving mm-Precision for Discrete-Carrier Localization
Paramartha Indirayanti, Tuba Ayhan, Marian Verhelst, Wim Dehaene, Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at ESSCIRC 2014.

A 6-b UWB Subsampling Track & Hold with 5.5-GHz ERBW in 40 nm CMOS
Maarten Strackx, Emiliano D’Agostino, Paul Leroux and Patrick Reynaert
KU Leuven ESAT-MICAS, KU Leuven AdvISe, and SCK-CEN - 2014

Presented at RFIC 2014.

E-band Transformer-based Doherty Power Amplifier in 40 nm CMOS
Ercan Kaymaksut, Dixian Zhao and Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at RFIC 2014.

A 40nm CMOS Receiver for 60GHz Discrete-Carrier Indoor Localization Achieving mm-Precision at 4m Range
Tom Redant, Tuba Ayhan, Nico De Clercq, Marian Verhelst, Patrick Reynaert and Wim Dehaene
KU Leuven ESAT-MICAS - 2014

Presented at ISSCC 2014.

A Dual-Mode Transformer-Based Doherty LTE Power Amplifier in 40nm CMOS
Ercan Kaymaksut and Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at ISSCC 2014.

A Transformer-Coupled True-Power Detector in 40nm CMOS
Brecht Francois and Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at ISSCC 2014.

A Push-Pull Complementary mm-Wave Power Amplifier with <0.8 degree AM-PM Distortion in 40nm CMOS
Shailesh Kulkarni and Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at ISSCC 2014.

A 0.9V 20.9dBm 22.3%-PAE E-Band Power Amplifier with Broadband Parallel-Series Power Combiner in 40nm CMOS
Dixian Zhao and Patrick Reynaert
KU Leuven ESAT-MICAS - 2014

Presented at ISSCC 2014.

60GHz frontend in 40nm CMOS
Nico De Clercq, Wim Dehaene and Patrick Reynaert
KU Leuven ESAT-MICAS - 2013

Presented at European Microwave Week 2013.

A 120GHz ASK transmitter in 40nm CMOS
Noel Deferm and Patrick Reynaert
KU Leuven ESAT-MICAS - 2013

Presented at European Microwave Week 2013.

A 0.55THz signal generator in 40nm CMOS
Wouter Steyaert and Patrick Reynaert
KU Leuven ESAT-MICAS - 2013

Presented at ESSCIRC 2013.

A plastic waveguide receiver in 40nm CMOS with on-chip bondwire antenna
Maarten Tytgat and Patrick Reynaert
KU Leuven ESAT-MICAS - 2013

Presented at ESSCIRC 2013.

A 120GHz Fully Integrated 10Gb/s Wireless Transmitter with On-Chip Antenna in 45nm Low Power CMOS
Noel Deferm and Patrick Reynaert
KU Leuven ESAT-MICAS - 2013

Presented at ESSCIRC 2013.

A Fully Digital PWM-based 1 to 3 GHz Multistandard Transmitter in 40-nm CMOS
Pieter Nuyts, Patrick Reynaert and Wim Dehaene
KU Leuven ESAT-MICAS - 2013

Presented at RFIC 2013.

A 120GHz quadrature frequency generator with 16.2GHz tuning range in 45nm LP CMOS
Wouter Volkaerts and Patrick Reynaert
KU Leuven ESAT-MICAS - 2013

Presented at RFIC 2013.

A 60GHz dual-mode PA in 40nm CMOS
Dixian Zhao and Patrick Reynaert
KU Leuven ESAT-MICAS - 2012

Presented at ESSCIRC 2012.

A 60GHz outphasing transmitter in 40nm CMOS
Dixian Zhao, Shailesh Kulkarni and Patrick Reynaert
KU Leuven ESAT-MICAS - 2012

Presented at ISSCC 2012.

A 200 GHz downconverter in 90nm CMOS
Maarten Tytgat, Michiel Steyaert and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2011

Yes, it is two hundred GHz, or 0.2THz !

Presented at ESSCIRC 2011.

A Doherty CMOS PA for WLAN in 90nm CMOS
Ercan Kaymaksut and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2011

Presented at ESSCIRC 2011 and appeared in JSSC 06/2012.

A Multimode Digital Transmitter in 65nm CMOS
Pieter Nuyts, Patrick Reynaert and Wim Dehaene
K.U.Leuven ESAT-MICAS - 2011

Presented at ESSCIRC 2011.
BEST PAPER AWARD, ESSCIRC-2011

A 900MHz CMOS PA for LTE in 90nm CMOS
Brecht Francois and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2011

Presented at ESSCIRC 2011.

A 60GHz Colpitts Oscillator in 90nm CMOS
Lianming Li, Patrick Reynaert and Michiel Steyaert
K.U.Leuven ESAT-MICAS - 2011

Presented at ESSCIRC 2011.

A 120GHz VCO in 65nm CMOS
Wouter Volkaerts, Michiel Steyaert and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2011

Presented at RFIC 2011.

A 94GHz Power Amplifier in 45nm CMOS
Noel Deferm and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2011

Presented at RFIC 2011.

A 120GHz 10Gbps transmitter in 65nm CMOS
Noel Deferm and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2011

This chip works at 120GHz and is capable of transmitting datarates of 10Gbps and above using BPSK, QPSK and 8QAM modulation. It was presented at ISSCC 2011.

A 2.5GHz Doherty PA in 90nm CMOS
Ercan Kaymaksut and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2010

This work was presented at ESSCIRC 2010.

A 60GHz PA in 65nm CMOS
Ying He and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2010

This work was presented at ESSCIRC 2010.

A 60GHz static divide-by-four in 90nm CMOS
Noel Deferm and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2010

This work was presented at ESSCIRC 2010.

A 100GHz differential amplifier in 90nm CMOS
Noel Deferm and Patrick Reynaert
K.U.Leuven ESAT-MICAS - 2010

This amplifier achieves a gain of 11dB from 93GHz to 104GHz. Power consumption is 94mW from a 1V supply. This work was presented at RFIC 2010.

A 0-20GHz wideband distributed amplifier
Brecht Machiels, Patrick Reynaert and Michiel Steyaert
K.U.Leuven ESAT-MICAS - 2010

15dB gain is achieved from DC to 21GHz. Power consuption is 12.5mW, average noise figure 5.4dB and IIP3 -6.6dBm This work was presented at RFIC 2010.

A 60GHz VCO in 90nm CMOS
Lianming Li, Patrick Reynaert, Michiel Steyaert
K.U.Leuven ESAT-MICAS - 2009

This VCO uses power matching in the cross-coupled pair to improve the efficiency of the negative transconductor. As a result, the device size and current consumption is reduced by two while achieving a phase noise of -95dBc at 1MHz offset. The tuning range is from 61 to 67GHz. Power consumption is only 3.2mW from a 0.6V supply. This work was presented at RFIC 2009 and appeard in the IEEE Transactions on Microwave Theory and Techniques, 2011.

A 60GHz VCO in 90nm CMOS
Lianming Li, Patrick Reynaert, Michiel Steyaert
K.U.Leuven ESAT-MICAS - 2008

A 60GHz VCO is implemented in 90nm CMOS. The VCO uses and inductive division technique to reduce the influence of the driver load capacitance on the tuning range. It operates from a supply voltage as low as 0.7V and achieves a phase noise of -90dBc at 1MHz offset. The tuning range is from 53 to 58 GHz. This VCO was presented at ESSCIRC 2008 and appeared in the IEEE Journal of Solid-State Circuits in 2009.

A 60GHz PA in 90nm CMOS
Debopriyo Chowdhury, Patrick Reynaert, Ali M. Niknejad
UC Berkeley - 2008

This 60GHz PA in 90nm CMOS was designed together with D. Chowdhury and Prof. Ali Niknejad from UC Berkeley. At 60GHz, the PA achieves a 1dB compressed output power of 9dBm while operating from a 1V supply, with a drain efficiency of 32%. It was presented at ISSCC 2008 and appeared in the IEEE Journal of Solid-State Circuits in 2009.

A 0.13um CMOS RF PA for Bluetooth
Patrick Reynaert and Michiel Steyaert
K.U.Leuven ESAT-MICAS - 2005

This fully integrated CMOS Class BE power amplifier achieves an output power of 23dBm at a supply voltage of 1.5V, a drain efficiency of 34% and a power added efficiency of 29%. An integrated LC power combining structure combines four on-chip amplifiers. At power back-off, one or more amplifiers can be disabled to increase the efficiency. This amplifier was presented at the Asian Solid-State Circuits Conference (A-SSCC) in November 2005 and published in the IEEE Journal of Solid-State Circuits in March 2007.

A 0.18um polar modulated CMOS RF PA for GSM-EDGE
Patrick Reynaert and Michiel Steyaert
K.U.Leuven ESAT-MICAS - 2004

A highly integrated polar modulated CMOS RF power amplifier was designed in a 0.18um CMOS technology. EDGE signals can be transmitted with an average modulated output power of 23.4dBm and an average power added efficiency of 22%. This linearized power amplifier meets the stringent EDGE spectral mask and EVM requirements. This power amplifier was presented at the International Solid-State Circuits Conference (ISSCC) in February 2005 and also appeared in the Journal of Solid-State Circuits in December 2005.